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- W2024443089 abstract "1: NonSilicon NTD Materials.- Neutron Transmutation Doping of p-Type Czochralski-Grown Gallium Arsenide.- NTD Germanium: A Novel Material for Low Temperature Bolometers.- Reliable Identification of Residual Donors in High Purity Epitaxial Gallium Arsenide by Transmutation Doping.- Spallation Neutron Damage in Group IV, III-V and II-VI Semiconductors at 5 K.- 2: Irradiation Technology.- Future Reactor Capacity for the Irradiation of Silicon.- An Automatic Controlled, Heavy Water Cooled Facility for Irradiation of Silicon Crystals in the DR 3 Reactor at Riso National Laboratory, Denmark.- Irradiation of Single Silicon Crystals with Diameters in the 3- to 5-Inch Range in French Reactors.- The Development of NTD Technology in the Institute of Atomic Energy.- Measurements of the Gamma Abundance of Silicon-31.- Experiences with the Norwegian Research Reactor JEEP II in Neutron Transmutation Doping.- 3: Practical Utilizaton of NTD Material.- The Development of the Market for Neutron Transmutation Doped Silicon.- Neutron Transmutation Doped Silicon for Power Semiconductor Devices.- Process Induced Recombination Centres in Neutron Transmutation Doped Silicon and Their Influence on High-Voltage Direct-Current Thyristors.- A Study of Float-Zoned NTD Silicon Grown in a Hydrogen Ambient.- Experience with Neutron Transmutation Doped Silicon in the Production of High Power Thyristors.- 4: Characterization of NTD Material.- Transient Current Spectroscopy of Neutron Irradiated Silicon.- Calibration of the Photoluminescence Technique for Determination of Phosphorus in Silicon by Neutron Transmutation Doping.- Swirls in Neutron-Transmutation Doped Float-Zoned Silicon.- Compensation Effects in N.T.D. Indium Doped Silicon.- Correlation of NTD-Silicon Rod, Slice Resistivity.- 5: Neutron Damage and Annealing.- A Detailed Annealing Study of NTD Silicon Utilizing Raman Scattering.- Annealing Study of NTD Silicon Doped with Boron.- Annealing Effects of NTD Silicon on High-Power Devices.- Study of Annealing Behavior and New Donor Formation in Neutron Transmutation Doped Silicon Grown in a Hydrogen Atmosphere.- Participants." @default.
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- W2024443089 date "1984-07-01" @default.
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- W2024443089 title "Neutron Transmutation Doping of Semiconductor Materials" @default.
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