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- W2024446039 startingPage "013102" @default.
- W2024446039 abstract "Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 102. The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 104 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device." @default.
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- W2024446039 date "2012-01-01" @default.
- W2024446039 modified "2023-09-27" @default.
- W2024446039 title "Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices" @default.
- W2024446039 doi "https://doi.org/10.3788/col201210.013102" @default.
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