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- W2024494064 abstract "We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 /spl mu/m. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 /spl mu/m is obtained by embedding the dots in an InGaAs layer. Depending on the growth structure, dot densities of 1-6/spl times/10/sup 10/ cm/sup -2/ are obtained. High dot densities are associated with large inhomogeneous broadenings, while narrow photoluminescence (PL) linewidths are obtained in low-density samples. From time-resolved PL experiments, a long carrier lifetime of /spl ap/1.8 ns is measured at room temperature, which confirms the excellent structural quality. A fast PL rise (/spl tau//sub rise/=10/spl plusmn/2 ps) is observed at all temperatures, indicating the potential for high-speed modulation. High-efficiency light-emitting diodes (LEDs) based on these dots are demonstrated, with external quantum efficiency of 1% at room temperature. This corresponds to an estimated 13% radiative efficiency. Electroluminescence spectra under high injection allow us to determine the transition energies of excited states in the dots and bidimensional states in the adjacent InGaAs quantum well." @default.
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- W2024494064 date "2001-01-01" @default.
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- W2024494064 title "Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide" @default.
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