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- W2024498514 abstract "Abstract The temperatures at which epitaxial growth of films of III–V materials are performed are generally such that the reactions at the surface are in equilibrium and the growth process is diffusion-limited. In such cases, as demonstrated in the past, it is useful and easier to perform equilibrium surface reaction calculations. In the past, the approach has been to guess a set of equilibrium reactions at the surface. Our research revealed that the danger with this approach is that if the guessed equilibrium reactions are inappropriate, the mathematical solution to the resulting set of non-linear equations can often be out of physical bounds. In this article we present a new formulation, which minimizes the Gibbs free energy at the surface as a whole, and provides the composition at the surface and growth rate subject to overall chemical equilibrium. The tricky task of guessing what reactions are actually in equilibrium is completely bypassed. The new formulation is demonstrated for growth of Gallium Nitride in a horizontal reactor, and shows excellent agreement with experimental data. The computational savings, when compared with a 52 step kinetic mechanism, was found to be a factor of eight." @default.
- W2024498514 created "2016-06-24" @default.
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- W2024498514 date "2004-01-01" @default.
- W2024498514 modified "2023-09-26" @default.
- W2024498514 title "A new approach to performing equilibrium surface reaction calculations and its application to predicting growth of gallium nitride" @default.
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- W2024498514 doi "https://doi.org/10.1016/j.jcrysgro.2003.11.009" @default.
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