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- W2024505341 abstract "From the viewpoint of the silicon thickness limit for mobility enhancement in a strained Si channel, we investigated the difference in the self-heating effect on electron mobility between strained silicon-on-insulator (sSOI) and strained Si grown on relaxed SiGe-on-insulator (e-Si SGOI) n-metal–oxide–semiconductor field-effect transistors (MOSFETs) as a function of silicon thickness. We found, for the first time, by numerical simulation that when considered with the presence of self-heating in the silicon thickness range from 5 to 10 nm, the reduction in the mobility enhancement ratio of sSOI n-MOSFETs is less than that of e-Si SGOI n-MOSFETs by numerical simulation. In addition, we confirmed that the quantum size effect, occurring at the peak mobility value of a 3 nm silicon thickness, disappeared in sSOI n-MOSFETs but was suppressed in e-Si SGOI n-MOSFETs. Therefore, we propose that an sSOI n-MOSFET is a more promising device than a e-Si SGOI n-MOSFET for high-performance devices with a design rule of less than 45 nm." @default.
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- W2024505341 date "2009-02-16" @default.
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- W2024505341 title "Comparative study of self-heating effect on electron mobility in nano-scale strained silicon-on-insulator and strained silicon grown on relaxed SiGe-on-insulator n-metal–oxide–semiconductor field-effect transistors" @default.
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- W2024505341 doi "https://doi.org/10.1088/0268-1242/24/3/035014" @default.
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