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- W2024531237 abstract "Line-edge roughness (LER) continues to be one of the biggest challenges as the CD size shrinks down to sub 100 nm. It is shown that resist components as well as illumination conditions play a big role. Influence of resist components in both 248 and 193nm chemically amplified resist formulations has been reported but the root cause is not fully understood and may be platform or even specific formulation dependent. This paper attempts to tackle the issue from the processing side. Effects of a simple hard bake process on the LER were studied. In the hard bake process, a given resist pattern was typically baked close to the glass-transition temperature after the development process. LER improved dramatically due to melting down of the rough surface. However, the wall angle of the edge lines also started to degrade at the optimum hard bake temperature. Studies on the effects of polymer Tg, hard bake temperature and time and the issues of the process are discussed." @default.
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- W2024531237 date "2005-05-04" @default.
- W2024531237 modified "2023-09-26" @default.
- W2024531237 title "Effect of hard bake process on LER" @default.
- W2024531237 doi "https://doi.org/10.1117/12.604401" @default.
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