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- W2024532536 abstract "Abstract The influence of enhanced hydrostatic pressure on evolution of dislocations in self-implanted silicon during annealing at different temperatures was investigated by means of electron microscopy methods. It is found that the main cause of the pressure impact differs for various annealing temperatures. The annealing under enhanced pressure at lower temperature (1070 K) has a negligible effect on structure of dislocations located in a thin layer (end-of-range (EOR) defects). At this temperature, enhanced pressure mainly increases the density of microdefects with oxygen precipitation. It is found that after high-temperature annealing (1400 K), enhanced hydrostatic pressure (HP) reduces dislocation density near the surface; however, dislocations extend deeper into the substrate as compared to the samples annealed under atmospheric pressure. The effect is attributed mainly to the reduction of silicon interstitial-atoms migration towards the surface due to increase in energy necessary to make silicon interstitial atom occupy a lattice site at the surface." @default.
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- W2024532536 date "2007-06-01" @default.
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- W2024532536 title "Hydrostatic pressure effect on dislocation evolution in self-implanted Si investigated by electron microscopy methods" @default.
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- W2024532536 doi "https://doi.org/10.1016/j.vacuum.2007.01.019" @default.
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