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- W2024550160 abstract "The submicron lithographic capability of several compositions of GeSe have been most conclusively shown by Tai and his co-workers.<sup>1</sup> Others<sup>2,3,4 </sup>have shown that As<sub>2</sub>S<sub>3</sub> and some of the other chalcogenides exhibit similar potential. In this paper we shall report on an extensive investigation of As<sub>2</sub>S<sub>3</sub>,.As<sub>2</sub>Se3 and GeSe2 used in conjunction with a variety of Ag-bearing materials such as evaporated Ag, Ag<sub>2</sub>S, Ag<sub>2</sub>Se and Ag<sub>2</sub>Te as well as with chemically applied Ag-bearing layers. We shall describe both wet and dry processing tech-niques used with these materials. We shall assess the submicron lithographic capabilities, processing latitudes and results obtained with the matrix combinations of these materials and show our experimental results." @default.
- W2024550160 created "2016-06-24" @default.
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- W2024550160 date "1983-11-07" @default.
- W2024550160 modified "2023-09-27" @default.
- W2024550160 title "<title>Options And Oportunities With Inorganic Photoresist Systems</title>" @default.
- W2024550160 doi "https://doi.org/10.1117/12.935091" @default.
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