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- W2024550247 abstract "Abstract Thin films of copper indium sulphide were deposited on Ti substrates by annealing electroless deposited CuIn alloy in H 2 S gas at 550°C. The elemental composition, and the structural and PEC characteristics of the films prepared with different Cu/In ratio were examined in order to identify single phase n- and p-type CuInS 2 films. The films have sphalerite structure with (112) preferred orientation. Before sulfurization, annealing of CuIn alloy in N 2 atmosphere is recommended to obtain films having uniform composition of Cu, In and S in the bulk of the material." @default.
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- W2024550247 date "1988-12-01" @default.
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- W2024550247 title "CuInS2 films prepared by sulfurization of electroless deposited CuIn alloy" @default.
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- W2024550247 doi "https://doi.org/10.1016/0165-1633(88)90040-8" @default.
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