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• W2024554523 endingPage "85" @default.
• W2024554523 startingPage "78" @default.
• W2024554523 abstract "Thin films of a-SiC:H are of interest for numerous applications in optoelectronic, nanoelectronic, and nanoelectromechanical devices due to a large optical band gap and excellent chemical inertness. In many cases, a low coefficient of thermal expansion (CTE) and high temperature stability are also desired. In this regard, we report an investigation of the influence of hydrogen content and average bond coordination (〈r〉) on the thermal stability and CTE of a-SiC:H thin films deposited by plasma enhanced chemical vapor deposition. The a-SiC:H hydrogen content determined by combined nuclear reaction analysis and Rutherford backscattering measurements (NRA–RBS) was skewed from 25 to 60% resulting in films with 〈r〉 ranging from 2.0 up to 3.2. We show that increased hydrogen content is accompanied by changes in the thermal stability and CTE for the a-SiC:H films. The most dramatic changes were observed to occur for films with hydrogen content > 45% where 〈r〉 is near the critical coordination number (〈r〉c) that delineates over and under constrained materials. For a-SiC:H films above 〈r〉c, relatively little change was observed in CTE with 〈r〉. However for films near or below 〈r〉c, CTE was observed to increase with decreasing 〈r〉 and significant hydrogen loss was observed after the annealing measurements." @default.
• W2024554523 created "2016-06-24" @default.
• W2024554523 creator A5005244555 @default.
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• W2024554523 creator A5060672673 @default.
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• W2024554523 creator A5080651062 @default.
• W2024554523 creator A5083806030 @default.
• W2024554523 creator A5088783885 @default.
• W2024554523 date "2014-04-01" @default.
• W2024554523 modified "2023-10-18" @default.
• W2024554523 title "Influence of hydrogen content and network connectivity on the coefficient of thermal expansion and thermal stability for a-SiC:H thin films" @default.
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