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- W2024555513 abstract "ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High-density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity-dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P-band emission of exciton-exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity. Mittels MBE auf (100)-GaAs-Substrat gewachsene ZnSe-Sehichten werden mittels Photolumineszenz und Anregungsspektroskopie unter hohen Anregungsdichten im Vergleich mit ZnSe-Einkristallen optisch untersucht. Hochanregungs-Lumineszenzbanden erscheinen in beiden Materialien für relativ kleine Anregungsdichten (ca. 30 kW/cm2), ihre energetischen Lagen stimmen jedoch nicht überein. Die intensitätsabhängige Form und das Verhalten der dominierenden Bande im Anregunngsspektrum in ZnSe-Einkristallen ähneln den Eigenschaften der M-Banden in anderen II-VI-Halbleitern. Die Hauptbanden in ZnSe/GaAs-Filmen entsprechen mehr einer typischen P-Banden-Emission, verursacht durch Exziton-Exziton-Stöße. Die Transmission von ZnSe-Schichten, die vom GaAs-Substrat abgelöst wurden, wird in abhängigkeit von der Laserintensität untersucht." @default.
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- W2024555513 date "1990-05-01" @default.
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- W2024555513 title "High-Density Spectroscopy of ZnSe/GaAs Epilayers in the Near-Band-Edge Region" @default.
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- W2024555513 doi "https://doi.org/10.1002/pssb.2221590152" @default.
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