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- W2024574777 abstract "An effect of the position of notch-doping layer in 1-μm GaN Gunn diode on threading dislocations (TDs) distribution is investigated by transmission electron microscopy. Compared with the top-notching-layer (TNL) structure, the bottom-notching-layer (BNL) structure can efficiently reduce the TDs density and improve the crystal quality in the transit region of GaN Gunn diode because it exhibits twice-transition of growth mode from atomic step flow to layer-by-layer nucleation and leads to a significant annihilation of TDs before penetrating into the transit region. X-ray diffraction and Raman spectroscopy reveal that the BNL structure has less compressive stress than the TNL structure." @default.
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- W2024574777 date "2012-02-13" @default.
- W2024574777 modified "2023-09-26" @default.
- W2024574777 title "Threading dislocation reduction in transit region of GaN terahertz Gunn diodes" @default.
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- W2024574777 doi "https://doi.org/10.1063/1.3685468" @default.
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