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- W2024588420 abstract "A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1 X 10<SUP>11</SUP> protons/cm<SUP>2</SUP>. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices." @default.
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- W2024588420 date "2002-04-26" @default.
- W2024588420 modified "2023-09-27" @default.
- W2024588420 title "<title>Proton radiation damage in high-resistivity n-type silicon CCDs</title>" @default.
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- W2024588420 doi "https://doi.org/10.1117/12.463422" @default.
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