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- W2024641009 abstract "We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of ∼250 °C with an activation energy of 1.27±0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In2O3. We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO." @default.
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- W2024641009 date "2009-03-16" @default.
- W2024641009 modified "2023-09-26" @default.
- W2024641009 title "Phase-change memory devices based on gallium-doped indium oxide" @default.
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- W2024641009 doi "https://doi.org/10.1063/1.3089238" @default.
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