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• W2024651829 abstract "Abstract X-ray photoelectron and Auger electron diffractions have been used here for the first time to identify growth morphology in the earliest stages (0–10 monolayers) of Ge epitaxy on Si(001)(2 × 1) surfaces held at room temperature (RT) and at 400°C. The Ge atomic arrangement in the (1 1 0) plane is examined by performing polar angle distribution of the Ge LMM intensities and by comparison with the corresponding Si2p substrate pattern. A detailed plot as a function of the Ge coverage of the forward scattering peak contrasts in the [111] and [001] directions, which correspond to the 1st and 3rd atomic neighbour rows, respectively, yields informations about the layer number distribution and the growth mode. Contrarily to the nearly two-dimensional (2D) growth taking place at RT, we obtain a 3D island formation at 400°C for a critical thickness exceeding 5 ML. Nevertheless, in the coverage domain between 2 and 5 ML for which layer-by-layer growth is normally expected, the observation of a significant up to 4 ML roughness across the surface prefigurates the islanding process and confirms very recent STM reports. Photoelectron scattering results are only consistent with pure 2D formation during the first 2 ML growth." @default.
• W2024651829 created "2016-06-24" @default.
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• W2024651829 date "1993-07-01" @default.
• W2024651829 modified "2023-09-25" @default.
• W2024651829 title "The Ge Stranski-Krastanov growth mode on Si(01)(2 x 1) tested by X-ray photoelectron and Auger electron diffraction" @default.
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• W2024651829 doi "https://doi.org/10.1016/0167-2584(93)90292-q" @default.
• W2024651829 hasPublicationYear "1993" @default.
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