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- W2024667833 abstract "A method for the removal of fast surface states, slow states and fixed charge in various MIS structures is described. This radio-frequency (RF) annealing process is done in a 13.56 MHz capacitively-coupled plasma etcher/ stripper. This technique has proven to be more effective than the conventional thermal annealing process, and has been used to successfully eliminate undesirable radiation effects induced by E-beam, electron gun metallization, or reactive ion etching exposure in MIS structures. The temperature during the annealing process is estimated to be less than 340°C. Necessary conditions of the annealing process are detailed, and an annealing mechanism is postulated." @default.
- W2024667833 created "2016-06-24" @default.
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- W2024667833 date "1977-01-01" @default.
- W2024667833 modified "2023-09-24" @default.
- W2024667833 title "RF annealing: A method of removing radiation damage in MIS structures" @default.
- W2024667833 doi "https://doi.org/10.1109/iedm.1977.189190" @default.
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