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• W2024676997 abstract "This paper is concerned with the deposition and characterization of thin layers of BaHfO 3 in the view of storage capacitor applications in random access memories. Growth of pure BaHfO 3 was obtained at deposition temperatures of 600–700 °C using a combination of Ba(thd) 2 and Hf(thd) 4 precursors. The resulting layers crystallize in the cubic perovskite structure and exhibit a dielectric constant of ∼35." @default.
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• W2024676997 date "2009-09-01" @default.
• W2024676997 modified "2023-09-27" @default.
• W2024676997 title "Deposition of BaHfO3Dielectric Layers for Microelectronic Applications by Pulsed Liquid Injection MOCVD" @default.
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• W2024676997 doi "https://doi.org/10.1002/cvde.200804272" @default.
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