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- W2024704916 abstract "In this paper, the status and issues of primary silicon carbide devices types are reviewed. The device types reviewed include SiC MOSFET, JFET, bipolar, IGBT, thyristor and JBS diodes. In addition, the key issues relating SiC material to device reliability and performance are identified." @default.
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- W2024704916 date "2012-05-01" @default.
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- W2024704916 title "Silicon carbide power device status and issue" @default.
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- W2024704916 doi "https://doi.org/10.1109/energytech.2012.6304688" @default.
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