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- W2024741471 abstract "Epitaxial single-crystal gallium nitride (GaN) films on sapphire were irradiated at low and room temperatures using O+ ions over a range of fluences. The accumulation of disorder on the Ga sublattice has been investigated based on He+ Rutherford backscattering analysis along the 〈0001〉-axial channeling direction. The degree of disorder in the O+ irradiated GaN increases at low doses and saturates above 10 displacements per atom (dpa). The microstructures of two O+-irradiated specimens are characterized using high-resolution transmission electron microscopy. Similar planar defect structures at the saturated disorder level are observed for as-irradiated and thermally annealed GaN. The growth and annihilation of these defects during ion irradiation and thermal annealing are believed to contribute to the saturation and stability of defect concentrations." @default.
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- W2024741471 date "2003-05-01" @default.
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- W2024741471 title "Ion-beam-irradiation induced defects in gallium nitride" @default.
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