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• W2024762920 abstract "Abstract A high current-low energy implant system for the processing of semiconductor devices at medium-high dopant levels is described. Criteria for selection and design of ion beam components such as ion beam optics, vacuum requirements and reliability are discussed. Variations in wafer uniformities for within wafer, wafer-to-wafer and run-to-run are presented." @default.
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• W2024762920 date "1979-01-01" @default.
• W2024762920 modified "2023-09-26" @default.
• W2024762920 title "Development of a prototype high-current low-energy ion implanter" @default.
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• W2024762920 doi "https://doi.org/10.1080/00337577908245995" @default.
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