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- W2024792672 abstract "In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset processes. Using data retention tests, these multistates in the set and reset processes were confirmed to be stable. The conduction mechanism gradually changed during reset process from space charge limited current to Schottky emission. A triple-ion reaction model has been proposed to reveal the chemical reaction properties in the resistive switching process." @default.
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- W2024792672 date "2015-06-01" @default.
- W2024792672 modified "2023-10-14" @default.
- W2024792672 title "Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory" @default.
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- W2024792672 doi "https://doi.org/10.1109/led.2015.2424996" @default.
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