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- W2024820573 abstract "In this paper, the author reviews some of the recent work on growth on non-planar and masked GaAs and InP substrates and show how it can simplify device fabrication enable novel or more functional devices to be made, and how it can be applied to the formation of low-dimensional structures." @default.
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- W2024820573 date "1993-06-02" @default.
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- W2024820573 title "Non-planar and masked-area epitaxy by organometallic chemical vapour deposition" @default.
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