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• W2024837370 abstract "A phosphorus-doped p-ZnO layer was prepared on an n-GaN/Al2O3 substrate by metal-organic chemical vapor deposition, and a heterojunction device was fabricated. The p-type doping of the device was confirmed by Hall, electrochemical capacitance-voltage and low-temperature photoluminescence measurements. Under forward bias, a random ultraviolet (UV) lasing phenomenon was detected from the p-ZnO:P/n-GaN heterojunction light-emitting diode. The UV emission peak was centered at approximately 379 nm and was achieved from the ZnO side of the diode. The proposed diode provides a potentially valuable way to realize future high-efficiency ZnO lasers." @default.
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• W2024837370 date "2012-07-30" @default.
• W2024837370 modified "2023-09-26" @default.
• W2024837370 title "Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes" @default.
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• W2024837370 doi "https://doi.org/10.1063/1.4740081" @default.
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