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• W2024843720 abstract "Abstract AlN/GaN Metal‐Insulator‐Semiconductor High Electron Mobility Transistors (HEMTs) have been grown and fabricated which utilize a 6 nm thick atomic layer deposited film of either Ta 2 O 5 or HfO 2 for gate insulation. Drain, transfer, and gate current characteristics are compared between both structures, showing a measurable difference in threshold voltage and transconductance. The cause is highlighted by the results of capacitance‐voltage analysis which showed 10 MHz dielectric constants of 8.7 and 11.7 for the HfO 2 and Ta 2 O 5 films, respectively. Furthermore, interface trap state density was extracted by Terman's method and compared between films. HEMT small signal frequency performance was representative of the different sub‐micron gate lengths. Consideration of the compared electrical results suggests that at this stage in ALD development, Ta 2 O 5 appears better suited for gate insulation of AlN/GaN HEMTs. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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• W2024843720 date "2011-05-17" @default.
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• W2024843720 title "AlN/GaN HEMTs with high‐κ ALD HfO₂ or Ta₂O₅ gate insulation" @default.
• W2024843720 doi "https://doi.org/10.1002/pssc.201001071" @default.
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