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- W2024861462 abstract "Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)$c$($8ifmmodetimeselsetexttimesfi{}2$) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e.g., the origins of the photoemission shifts and electronic structures, using surface science methods." @default.
- W2024861462 created "2016-06-24" @default.
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- W2024861462 date "2011-05-31" @default.
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- W2024861462 title "Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces" @default.
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- W2024861462 doi "https://doi.org/10.1103/physrevb.83.195329" @default.
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