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- W2024878033 abstract "Fluorinated amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been studied by treating InGaZnO film in a CHF <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma. The saturation carrier mobility can be improved from 29.6 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s to as high as 39.8 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s. In addition, the passivation effect of the fluorination on the dominant donor-like traps at the InGaZnO/HfLaO interface is observed, as reflected by suppression of hysteresis phenomenon and smaller subthreshold swing. Measurement result of low-frequency noise further supports the improvement in electrical properties by the plasma treatment." @default.
- W2024878033 created "2016-06-24" @default.
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- W2024878033 date "2014-03-01" @default.
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- W2024878033 title "Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric" @default.
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