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- W2024881143 abstract "Abstract We have simulated the electronic states and piezoresistance coefficients in single‐crystal silicon (Si) nanosheets on the basis of first‐principles calculations of model structures. The carrier conductivities of the hydrogen‐terminated Si nanosheet models with (001) surface orientation have been calculated using band carrier densities and their corresponding effective mass tensors derived from the two‐dimensional (2D) band diagram by our original approach for a small amount of carrier occupation. The [110] uniaxial tensile stress causes band deformation, leading to the redistribution of carriers, and a drastic change of conductivity can be observed for nanosheet models. The p‐type longitudinal and transverse piezoresistance coefficients about the [110] tensile stress swell up as the nanosheet becomes thinner, and we have obtained high piezoresistance coefficients of 343 × 10 −11 Pa −1 of π l[110] and − 141 × 10 −11 Pa −1 of π t [110] for about 1 nm thickness. It is expected that p‐type ultra‐thin Si(001) nanosheet will be a suitable candidate for nanoscale piezoresistors due to its giant piezoresistivity. Copyright © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc." @default.
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- W2024881143 date "2010-02-16" @default.
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- W2024881143 title "First-Principles Simulation on Piezoresistive Properties in Doped Silicon Nanosheets" @default.
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- W2024881143 doi "https://doi.org/10.1002/tee.20511" @default.
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