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- W202491012 abstract "An investigation was made of the radiation-stimulated diffusion of contact materials (rhodium, gold, indium) in the surface layer of silicon in Schottky diodes during irradiation with /sup 60/Co ..gamma.. rays (Japprox.1500 rad/sec, Phi/sub max/approx.7.2x10/sup 9/ rad). The method of capacitance-voltage characteristics was used to determine the carrier distribution profiles. It was established that the distortion of these profiles by irradiation was due to the appearance of additional compensating impurities in the contact region. The impurities were identified on the basis of their electrophysical parameters (ionization energy, capture cross section, charging time) and the results indicated that these impurities were atoms of the contact material. The experimental results indicated that radiation-stimulated diffusion of rhodium and gold occurred in surface layers of silicon under the action of ..gamma.. rays. The radiation-stimulated diffusion coefficients of these impurities, estimated from the measured profiles, were approx.2.3x10/sup -14/ cm/sup 2//sec. The diffusion of indium was not stimulated by irradiation under the experimental conditions employed." @default.
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- W202491012 date "1976-11-01" @default.
- W202491012 modified "2023-09-26" @default.
- W202491012 title "Diffusion of impurities in silicon accelerated by /sup 60/Co. gamma. rays" @default.
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