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- W2024930243 abstract "The physical mechanism of IG Random Telegraph Noise (IG-RTN) has been studied in deeply scaled pMOSFETs subject to Negative Bias Temperature Stress (NBTS). Using carrier separation technique, we identify the majority carriers in IG-RTN are channel holes. By investigating the electric field and temperature dependence of the capture time τc and emission time τe in IG-RTN, it is found that the physical origin of IG-RTN are NBTS-induced switching traps; Further quantitative analysis of IG-VG reveal that IG-RTN is related to a tunneling process. Based on these results, we propose a tunneling model through NBTS-induced switching traps to explain the discrete gate leakage. The model provides a good agreement between the predicted and experimental data." @default.
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- W2024930243 date "2013-04-01" @default.
- W2024930243 modified "2023-10-16" @default.
- W2024930243 title "The physical mechanisms of I<inf>G</inf> Random Telegraph Noise in deeply scaled pMOSFETs" @default.
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- W2024930243 doi "https://doi.org/10.1109/irps.2013.6532122" @default.
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