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• W2024941024 abstract "The atomic and electronic structures of the polar GaN(000) surface were investigated by x-ray photoelectron diffraction (XPD) and ab initio density-functional theory (DFT) calculations. A well-ordered GaN(000) surface of a free-standing GaN wafer was prepared by sample annealing in a NH3 atmosphere. A N-terminated bare (1 × 1) structure was confirmed. An electronic band structure was investigated by DFT calculations. The surface state at the top of the valence band was localized for a relaxed (1 × 1) structure. The energy loss function (ELF) was computed in the framework of the many-body perturbation theory. Plasmon loss peak positions were found to be in good agreement with reflection-electron energy loss spectroscopy (REELS) measurements." @default.
• W2024941024 created "2016-06-24" @default.
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• W2024941024 date "2012-12-10" @default.
• W2024941024 modified "2023-09-25" @default.
• W2024941024 title "Atomic and electronic structure of N-terminated GaN(0001̄) (1 × 1) surface" @default.
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• W2024941024 doi "https://doi.org/10.1088/1742-6596/398/1/012013" @default.
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