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• W2024946639 abstract "Electroluminescence from metal–oxide–semiconductor structures on Si was experimentally found to be much less temperature dependent than photoluminescence of Si. The physical reason is attributed to the field-induced carrier confinement in a small region, which contains much less impurity states, compared to the unconfined region. Thus, electron–hole recombination by radiation emission instead of through highly temperature-dependent impurity states is increased. A proposed model well explains the reduced temperature dependence with the field-induced carrier confinement." @default.
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• W2024946639 date "2001-01-15" @default.
• W2024946639 modified "2023-09-27" @default.
• W2024946639 title "Reduced temperature dependence of luminescence from silicon due to field-induced carrier confinement" @default.
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• W2024946639 doi "https://doi.org/10.1063/1.1339842" @default.
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