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- W2024950732 abstract "Abstract Low threshold, high efficiency strained-layer InGaAsGaAsAlGaAs quantum well heterostructure lasers have been grown by metal-organic chemical vapor deposition. The metallurgical aspects of critical thickness in strained-layer heterostructure systems, the effects of strain and quantum size effect on emission wavelength, and considerations of threshold current density in strained-layer lasers are briefly outlined. Broad area InGaAsGaAs strained-layer heterostructure lasers having varying quantum well composition and thickness with respect to the critical thickness are described. The characteristics of optimized strained-layer InGaAsGaAs quantum well heterostructure lasers are presented." @default.
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- W2024950732 title "Strained-layer quantum well heterostructure lasers" @default.
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- W2024950732 doi "https://doi.org/10.1016/0040-6090(92)90871-8" @default.
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