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- W2024964043 abstract "A novel mechanism is described which enables the selective formation of three-dimensional Ge islands. Submonolayer adsorption of Ga on Si(111) at high temperature leads to a self-organized two-dimensional pattern formation by separation of the $7ifmmodetimeselsetexttimesfi{}7$ substrate and $mathrm{Ga}/mathrm{Si}(111)mathrm{text{ensuremath{-}}}(sqrt{3}ifmmodetimeselsetexttimesfi{}sqrt{3})ensuremath{-}R30ifmmode^circelsetextdegreefi{}$ domains. The latter evolve at step edges and domain boundaries of the initial substrate reconstruction. Subsequent Ge deposition results in the growth of 3D islands which are aligned at the boundaries between bare and Ga-covered domains. This result is explained in terms of preferential nucleation conditions due to a modulation of the surface chemical potential." @default.
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- W2024964043 date "2007-02-09" @default.
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- W2024964043 title "Alignment of Ge Nanoislands on Si(111) by Ga-Induced Substrate Self-Patterning" @default.
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- W2024964043 doi "https://doi.org/10.1103/physrevlett.98.066104" @default.
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