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- W2024975127 abstract "The reliability of the gate oxide in microelectronics, i.e., the ability of a thin film of this material to retain its excellent dielectric properties while subjected to high electric fields, has been a perennial concern over the last 40-45 years. Two dominant gate oxide failure mechanisms, dielectric breakdown and the negative bias instability, have continued to cause concern as MOSFET devices have scaled to nanometer dimensions" @default.
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- W2024975127 date "2006-07-21" @default.
- W2024975127 modified "2023-09-26" @default.
- W2024975127 title "Gate Oxide Reliability for Nano-Scale CMOS" @default.
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- W2024975127 doi "https://doi.org/10.1109/icmel.2006.1650900" @default.
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