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- W2024978230 abstract "Abstract Present day high current implanters are capable of delivering very high power densities to the wafers. Maintaining photoresist integrity during implantation is presently becoming a limiting factor, preventing the use of those machines to their full throughput capability. In the past, thermal conduction through the back surface of wafers has been enhanced by application of high pressures using ring clamps. Such clamps are the cause of several undesirable effects. This paper evaluates the various components of thermal rise at the surface of a wafer during implant, in the context of a mechanically scanned end station. A clampless method of thermal control is described, and the performance is reviewed as a function of all relevant parameters." @default.
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- W2024978230 date "1987-01-01" @default.
- W2024978230 modified "2023-10-01" @default.
- W2024978230 title "Wafer cooling in a high current ion implanter" @default.
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- W2024978230 doi "https://doi.org/10.1016/0168-583x(87)90858-5" @default.
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