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- W2024990870 abstract "Abstract The angular dependence of the etch depth has been studied for GaAs using a Kaufman-type ion-beam source and methane (13%)-hydrogen as the processing gas mixture. The experimental results we have developed a model based on a reaction between a polymer carbonaceous film and the substrate where the desorption of the products is considered." @default.
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- W2024990870 date "1994-10-01" @default.
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- W2024990870 title "bombardment angle dependence of reactive ion-beam etching of GaAs with CH4/H2" @default.
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- W2024990870 doi "https://doi.org/10.1016/0042-207x(94)90038-8" @default.
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