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- W2025086741 abstract "GaAsSbN layers with small lattice mismatch to GaAs were studied for possible application as the intrinsic layer in a GaAs-based p-i-n photodetector. Our calculation has shown that small lattice mismatch GaAsSbN to GaAs could be achieved at an Sb∕N atomic ratio of 2.60. GaAsSbN was grown as the intrinsic layer for a GaAs∕GaAsSbN∕GaAs photodetector structure using solid-source molecular beam epitaxy in conjunction with a radio frequency (rf) plasma-assisted nitrogen source and valved antimony cracker source. The lattice mismatch of the GaAsSbN layer to GaAs was kept below 5000ppm, which is sufficient to maintain coherent growth of ∼0.5μm thick GaAsSbN on GaAs substrate. The growth temperature was varied between 420 and 520°C, and the Sb flux beam equivalent pressure between 1.7×10−8 and 2.3×10−8Torr to maintain coherent growth. All samples exhibit room temperature photocurrent response in the 1.3μm wavelength region. X-ray diffraction two-dimensional maps showed diffuse scattering, which may have been caused by point defects in the material." @default.
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- W2025086741 date "2005-05-01" @default.
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- W2025086741 title "Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy" @default.
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