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• W2025098489 abstract "A pyrogenic steam generator is implemented in a conventional AST SHS2800ε RTP system to produce H2O gas ambient for oxide growth enhancement in a Wet Rapid Thermal Oxidation process (WRTO). For similar thermal budgets of wet and dry oxidation, the growth rate is several times higher for the wet process. The temperature sensitivity (unit: Å/K) of the process changes strongly with the grown oxide thickness. The influence of H2O:O2 proportion in the process gas on final oxide thickness is also determined and leads to a definition of a `wet' process. Isothermal and isochronal thickness data are summarized for the wet oxidation process. All results are analysed with the theoretical growth model of Deal and Grove [1] and compared to previous results with conventional furnace technology. Electrical breakdown properties of the various oxides grown on epitaxial wafers with an average thickness of 140 Å are presented." @default.
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• W2025098489 date "1998-06-01" @default.
• W2025098489 modified "2023-10-17" @default.
• W2025098489 title "Wet rapid thermal oxidation of silicon with a pyrogenic system" @default.
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• W2025098489 doi "https://doi.org/10.1016/s0921-5107(98)00166-4" @default.
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