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• W2025251716 startingPage "1218" @default.
• W2025251716 abstract "The formation of hafnium silicate films (HfSixOy) for use as gate oxides with a large dielectric constant by solid-state reaction of Hf metal and SiO2 was investigated. Thin, fully reacted silicate films could be formed, and were thermally stable in vacuum to temperatures in excess of 800°C. Evidence was found that the interface between a hafnium silicate layer and the silicon substrate is stable against SiO2 formation." @default.
• W2025251716 created "2016-06-24" @default.
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• W2025251716 date "2006-06-21" @default.
• W2025251716 modified "2023-09-26" @default.
• W2025251716 title "Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction" @default.
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• W2025251716 doi "https://doi.org/10.1116/1.2180274" @default.
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