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• W2025268959 abstract "In this paper, we proposed a novel surface cleaning and nitridation technology of compound semiconductors using gas-decomposition reactions in a catalytic chemical vapor deposition (Cat-CVD) system. An NH, gas was used for the surface modification of GaAs(100). X-ray photoelectron spectroscopy measurements revealed that, (1) oxygen related peaks vanished by a 3 min-nitridation treatment at 150 °C, (2) nanometer-thick GaN films were formed on the surface by 30 min-nitridation treatments, (3) nitrided GaAs had good oxidation resistances. Atomic force microscope observations revealed that these surfaces were very smooth (root mean square roughness, 0.28 nm)." @default.
• W2025268959 created "2016-06-24" @default.
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• W2025268959 date "1999-04-01" @default.
• W2025268959 modified "2023-10-12" @default.
• W2025268959 title "Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method" @default.
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• W2025268959 doi "https://doi.org/10.1016/s0040-6090(98)01688-5" @default.
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