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- W2025328145 abstract "Trimethylindium (TMI) and tertiarybutylphosphine (TBP) are an attractive combination of sources for Metalorganic vapor phase epitaxy (MOVPE) of InP-based compounds. TBP is used to deposit high-quality layers at significantly lower V/III ratios, and is less hazardous than phosphine. Although source purities have improved considerably, consistent quality remains a concern. In the present work, metallic and organic impurities in the sources were measured at ppb levels, using analytical techniques such as FT-NMR, GC-MS, and ICP-OES. Impurity profiles were compared with the electrical properties of InP grown by using TMI and TBP at 600 °C and V/III ratio of 20. The films show 77 and 300K Hall mobilities of 140,000 and 4850cm 2 /Vs respectively, and a background carrier concentration of 1.5 x 10 14 cm -3 . For comparative evaluation, InP films were grown using TMI and PH 3 under optimized conditions at 580-600 °C and V/III ratio of 450-800 to achieve 77 and 300 K Hall mobilities as high as 287,000 and 5400 cm 2 /Vs, and a background carrier concentration about 6-8 x 10 13 cm -3 . The impact of deleterious impurities on electronic properties is discussed along with the oxygen-free synthetic strategies to metalorganic sources such as TMI, TBP and TBAs. Also reported are the results achieved with a novel delivery system (Uni-Flo cylinder) that has greatly improved the evaporation of solid sources such as TMI, Cp 2 Mg and CBr 4 providing stable vapor concentration and greater than 95% utilization of precursors during MOVPE growth." @default.
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- W2025328145 date "2004-12-01" @default.
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- W2025328145 title "Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine" @default.
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- W2025328145 doi "https://doi.org/10.1016/j.jcrysgro.2004.09.006" @default.
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