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• W2025429057 abstract "A new analytical DC model accounting for the kink effect of polycrystalline silicon thin-film transistors (poly-Si TFTs) is presented in this paper. When considering the exponential density of trap states in the film, a quasi-two-dimensional approach is used to give an analytic expression for avalanche multiplication factor. Compared with the available experimental data, the proposed model provides accurate description of the output characteristics over a wide range of bias voltages. Based on the kink model, higher drain voltages or higher trap states density leads to higher avalanche multiplication factors." @default.
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• W2025429057 date "2009-06-01" @default.
• W2025429057 modified "2023-10-01" @default.
• W2025429057 title "Modeling of kink effect in polycrystalline silicon thin-film transistors" @default.
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• W2025429057 doi "https://doi.org/10.1016/j.sse.2009.03.011" @default.
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