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• W2025449472 abstract "An integrated hydrogen-switching sensor, with an inside heater operated by a power transistor and other elements, has been made on a pn+ or np+ silicon wafer using conventional IC fabrication techniques. It consists of an MIS junction with a thin palladium film in series with a pn junction on the silicon substrate. The sensor device can not only detect hydrogen gas down to 10 ppm or less at 100 °C, but can also close or open an electric circuit, since the MIS junction changes the threshold voltage Vth of turn-on or turn-off in proportion to the concentration of hydrogen gas. Thus the device can also function as an actuator." @default.
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• W2025449472 date "1986-04-01" @default.
• W2025449472 modified "2023-09-23" @default.
• W2025449472 title "An integrated hydrogen-switching sensor with a Pd-Si tunnel mis structure" @default.
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• W2025449472 doi "https://doi.org/10.1016/0250-6874(86)80017-8" @default.
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