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• W2025486585 abstract "An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for 60 ㎛ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched 200 ㎛ deep via profile, at high etch rate. Desired etch profile was obtained at 40 mTorr pressure, 950 W coil power, 90W platen power with an etch rate ~ 4 ㎛/min and via etch yield >90% over a 3-inch wafer, using 24 ㎛ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ~ 0.5 Ω and via inductance value measured was ~ 83 pH." @default.
• W2025486585 created "2016-06-24" @default.
• W2025486585 creator A5004974180 @default.
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• W2025486585 date "2008-09-30" @default.
• W2025486585 modified "2023-09-25" @default.
• W2025486585 title "A Reproducible High Etch Rate ICP Process for Etching of Via-Hole Grounds in 200μm Thick GaAs MMICs" @default.
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• W2025486585 doi "https://doi.org/10.5573/jsts.2008.8.3.244" @default.
• W2025486585 hasPublicationYear "2008" @default.
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