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• W2025731690 startingPage "5791" @default.
• W2025731690 abstract "The ablation and amorphization of crystalline Si by femtosecond and picosecond laser irradiations are reported in this paper. Laser pulse width was varied in the range of 100 fs–200 ps. We obtained the dependences of ablation rate and fluence for amorphization on laser pulse width. At a lower fluence than a single-shot ablation threshold, femtosecond laser irradiation induced the amorphization of crystalline Si. We confirmed the thickness of an amorphous Si layer by transmission electron microscopy. The thickness of an amorphized layer, which was about 50 nm and almost uniform, did not depend on the number of irradiated laser pulses and fluence. The fluence range for amorphization decreased with increasing laser pulse width." @default.
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• W2025731690 date "2006-07-01" @default.
• W2025731690 modified "2023-10-16" @default.
• W2025731690 title "Ablation and Amorphization of Crystalline Si by Femtosecond and Picosecond Laser Irradiation" @default.
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• W2025731690 doi "https://doi.org/10.1143/jjap.45.5791" @default.
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