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• W2025741606 abstract "The authors demonstrate that the electric conductivities of cubic and hexagonal boron nitride (c-BN and h-BN) thin films increased markedly by the in situ doping of zinc. The doped films were electrically semiconducting, and conductivities at room temperature increased from 10−8to10−2Ω−1cm−1 with increasing zinc concentration from 400to20000ppm. Activation energies for electric conduction (Ec) of c-BN decreased from 0.3to0.1eV with increasing zinc concentration, suggesting feasible shallow-level doping. On the other hand, h-BN thin films showed approximately 0.1eV higher Ec than those of c-BN’s, due to the formation of defective B–B bonds." @default.
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• W2025741606 date "2006-09-11" @default.
• W2025741606 modified "2023-09-30" @default.
• W2025741606 title "Electric conductivity of boron nitride thin films enhanced by <i>in situ</i> doping of zinc" @default.
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• W2025741606 doi "https://doi.org/10.1063/1.2354009" @default.
• W2025741606 hasPublicationYear "2006" @default.
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