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- W2025742105 abstract "Czochralski silicon wafers were implanted with H+ ions at a dose of 1×1016cm−2 followed by hydrogen plasma treatments at different temperatures. The minimum hydrogen implantation dose required for silicon surface exfoliation of 3×1016H+∕cm2 without further hydrogen incorporation was reduced to one-third by subsequent plasma hydrogenation. The corresponding local vibrational modes of hydrogen molecules, vacancy-hydrogen complexes, and Si–H bonds on surfaces have been analyzed by micro-Raman scattering spectroscopy to investigate blistering and platelet formation. The surface profile has been studied by atomic force microscopy and scanning electron microscopy. The plasma treated samples were annealed to investigate the mechanism and applicability of the induced exfoliation. ⟨111⟩-platelet formation occurred below plasma hydrogenation temperatures of 350°C. At temperatures above 450°C, ⟨100⟩-platelet nucleation induced blistering." @default.
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- W2025742105 date "2006-12-15" @default.
- W2025742105 modified "2023-09-27" @default.
- W2025742105 title "Blistering of implanted crystalline silicon by plasma hydrogenation investigated by Raman scattering spectroscopy" @default.
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- W2025742105 doi "https://doi.org/10.1063/1.2401030" @default.
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