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- W2025754507 abstract "Dislocation pinning due to 〈110〉 self-interstitial atoms (SIAs) in Mo after 20 MeV proton irradiation at 5 K was investigated in the wide range of Frenkel-pair concentrations CFP from 10−4 to 10 ppm, where dislocation pinning due to the free migration of SIAs is observed as a broad pinning at around 40 K (the so-called 40 K pinning). With increasing CFP, the magnitude of the 40 K pinning increases showing a shift to lower temperatures. Close study suggests that the 40 K pinning is composed of a constituent lower temperature pinning (LTP) and higher temperature pinning (HTP). The fractional ratio of SIAs arriving for LTP to those for the whole 40 K pinning FLTP increases with decreasing CFP, showing saturation at 100% for CFP below 0.001 ppm, or decreases in proportion to CFP1/3 for CFP⩾0.001 ppm. The CFP dependence of FLTP is very similar to the fractional ratio of SIA-Is in CFP reported in Part I, where SIA-Is are 〈110〉 SIAs which can undergo three-dimensional migration. The CFP dependence of SIAs of another type responsible for HTP is very similar to that of SIA-IIs reported in Part I which reveal no relaxation peak, suggesting that SIA-IIs cannot undergo three-dimensional migration but migrate two or one dimensionally. The present work suggests that 〈110〉 SIAs of two types can be formed in Mo during low temperature irradiation." @default.
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- W2025754507 date "1994-09-01" @default.
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- W2025754507 title "Migration mechanism of self-interstitial atoms in Mo after low temperature irradiation II. Dislocation pinning" @default.
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- W2025754507 doi "https://doi.org/10.1016/0925-8388(94)90466-9" @default.
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