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- W2025855100 abstract "An amorphous material with semiconducting properties has been produced by the annealing of a multilayer composite consisting of alternating layers—6 Å of molybdenum and 16 Å of selenium—deposited in high vacuum. Measurements of the coplanar and perpendicular conductivities before and after a 300 °C anneal, together with x-ray diffraction data, indicate that these composite films approach an amorphous phase with a stoichiometry close to MoSe2 and with electrical properties indicative of a narrow gap semiconductor (Eg≊0.1 eV). Rectifying behavior has also been observed in conjunction with palladium contacts." @default.
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- W2025855100 title "Electrical properties of a new amorphous molybdenum‐selenium semiconducting compound produced by the annealing of ultrathin multilayer composites" @default.
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- W2025855100 doi "https://doi.org/10.1063/1.356296" @default.
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