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- W2025995747 abstract "Antimonide-based HEMTs with a 0.35 µm gate length have been fabricated with an InAlSb/InAs heterojunction. The new Te-doped MBE material, which does not contain highly-reactive AlSb, exhibits a Hall mobility of 23,500 cm2/V-s and a sheet density of 1.7×1012 cm−2. The devices have a DC transconductance of 1000 mS/mm and an fTLg product of 32 GHz-µm at VDS=0.35 V." @default.
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- W2025995747 date "2005-01-01" @default.
- W2025995747 modified "2023-10-14" @default.
- W2025995747 title "Sb-based HEMTs with InAlSb∕InAs heterojunction" @default.
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- W2025995747 doi "https://doi.org/10.1049/el:20052105" @default.
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